• 文献标题:   Electronic transport and shot noise in a Thue-Morse bilayer graphene superlattice with interlayer potential bias
  • 文献类型:   Article
  • 作  者:   LI YQ, ZHANG HM, LIU D
  • 作者关键词:   bilayer graphene superlattice, thuemorse sequence, transport property, interlayer potential bia
  • 出版物名称:   MODERN PHYSICS LETTERS B
  • ISSN:   0217-9849 EI 1793-6640
  • 通讯作者地址:   Hebei Normal Univ
  • 被引频次:   1
  • DOI:   10.1142/S0217984916501815
  • 出版年:   2016

▎ 摘  要

In this paper, we evaluate the transport properties of a Thue-Morse AB-stacked bilayer graphene superlattice with different interlayer potential biases. Based on the transfer matrix method, the transmission coefficient, the conductance, and the Fano factor are numerically calculated and discussed. We find that the symmetry of the transmission coefficient with respect to normal incidence depends on the structural symmetry of the system and the new transmission peak appears in the energy band gap opening region. The conductance and the Fano factor can be greatly modulated not only by the Fermi energy and the interlayer potential bias but also by the generation number. Interestingly, the conductance exhibits the plateau of almost zero conductance and the Fano factor plateaus with Poisson value occur in the energy band gap opening region for large interlayer potential bias.