▎ 摘　　要

Pristine graphene inks show great promise for flexible printed electronics due to their high electrical conductivity and robust mechanical, chemical, and environmental stability. While traditional liquid-phase printing methods can produce graphene patterns with a resolution of similar to 30 mu m, more precise techniques are required for improved device performance and integration density. A high-resolution transfer printing method is developed here capable of printing conductive graphene patterns on plastic with line width and spacing as small as 3.2 and 1 mu m, respectively. The core of this method lies in the design of a graphene ink and its integration with a thermally robust mold that enables annealing at up to similar to 250 degrees C for precise, high-performance graphene patterns. These patterns exhibit excellent electrical and mechanical properties, enabling favorable operation as electrodes in fully printed electrolyte-gated transistors and inverters with stable performance even following cyclic bending to a strain of 1%. The high resolution coupled with excellent control over the line edge roughness to below 25 nm enables aggressive scaling of transistor dimensions, offering a compelling route for the scalable manufacturing of flexible nanoelectronic devices.