• 文献标题:   Drop-on-demand printing of edge-enhanced and conductive graphene twin-lines by coalescence regulation and multi-layers overwriting
  • 文献类型:   Article
  • 作  者:   LIAN HC, QI LH, LUO J, ZHANG RR
  • 作者关键词:   graphene twinline, edgeenhanced, coalescence regulation, multilayers overwriting, line resistor, dropondemand printing
  • 出版物名称:   2D MATERIALS
  • ISSN:   2053-1583
  • 通讯作者地址:  
  • 被引频次:   2
  • DOI:   10.1088/2053-1583/abd2d5
  • 出版年:   2021

▎ 摘  要

Fabrication of straight and highly conductive graphene lines, the cornerstones of high-performance graphene-based printed electronics, still faces considerable challenges. We have developed a convenient and effective way to print edge-enhanced highly conductive graphene twin-lines by coalescence regulation and multi-layers overwriting (CRMO), which enhances both outline accuracy and electrical conductivity. The overlapping traces and wavy edges were eliminated by droplets coalescence at the expense of introducing discrete footprints, which were transformed into continuous lines by multi-layers overwriting. We successfully fabricated the edge-enhanced graphene twin-line with an edge width of 72.33 +/- 7.96 mu m and a linear resistivity of 0.188 +/- 0.160 k omega mu m(-1), yielding the coinstantaneous enhancement of outline accuracy, printing efficiency, and electrical conductivity. Printed graphene twin-lines achieve one of the lowest relative linear resistivity reported so far and a conductivity of 359.88 S m(-1). We attributed the highly concentrated and tightly interconnected graphene flakes at the edge to the synergetic effect of CRMO. Finally, we have demonstrated the feasibility of CRMO by printing graphene line resistors with excellent linearity and broad resistance ranges. Such findings establish relationships among the printing method, line morphologies, flakes distribution, and electrical conductivity. This work will be of great significance for the self-assembly of graphene-based functional materials and graphene-based printed electronics development.