• 文献标题:   Molecular and electronic structure of PTCDA on bilayer graphene on SiC(0001) studied with scanning tunneling microscopy
  • 文献类型:   Article
  • 作  者:   LAUFFER P, EMTSEV KV, GRAUPNER R, SEYLLER T, LEY L
  • 作者关键词:  
  • 出版物名称:   PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS
  • ISSN:   0370-1972
  • 通讯作者地址:   Lehrstuhl Tech Phys
  • 被引频次:   47
  • DOI:   10.1002/pssb.200879615
  • 出版年:   2008

▎ 摘  要

Epitaxial growth of graphene on SiC surfaces by solid state graphitization is a promising route for future development of graphene based electronics. In the present work we study the morphology and molecular scale structure of monolayer films 3,4,9,10-perylene tetracarboxylic dianhydrid (PTCDA) on bilayer graphene on SiC(0001) by scanning tunneling microscopy (STM). First we discuss how the PTCDA molecules adsorb on bilayer graphene. We specially regard the density of PTDA molecules at monolayer coverge. From the comparison with experiments on HOPG (Au(111) and Ag(110) from literature) we infer a non-planar adsorption geometry of PTCDA molecules on bilayer graphene. The electronic structure of the surrounding bilayer graphene substrate is investigated via scanning tunneling spectroscopy (STS) and reveals n-type doping of bilayer graphene during adsorption of PTCDA. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim