▎ 摘　　要

Many doping methods can affect graphene's electronic properties, but several of them disrupt the underlying structure and lower the electrical mobility of graphene. As a result, improved strategies for tuning the electrical characteristics of graphene by developing its unique qualities are required. We present results from studies that utilized chemical doping with Potassium Bromide (KBr) solution to discover a variety of physical features of single-layer graphene. We used metal mask patterning to create CVD-grown graphene field-effect transistors, which were characterized using Raman spectroscopy and transport measurements utilizing a low-noise standard lock-in amplifier approach. We investigated the influence of KBr doping on the electrical properties of graphene as the charge neutrality point (CNP) shifted towards negative gate voltage and validated the n-type doping in graphene. After doping, mobility was enhanced twice and the highest value attained about 3546 cm(2)/V s, which is a promising result. The shifting of the G and 2D peak positions in Raman spectroscopy towards the lower wavenumbers with increasing treatment time indicates the n-type doping effect on the graphene-based devices. Our findings reveal that chemical treatment with KBr is an effective technique to improve the electrical properties of monolayer graphene.