▎ 摘　　要

The present paper investigates the electrical and physical characteristics of graphene material aiming its use as an active device base material for nanotransistors and nanosensors. The device structures namely nanotransistors are studied and compared to that of silicon NanoMOSFET. The transport mechanism model based essentially on the ballistic transport using the Fermi level variations has been discussed for both device structures SiNanoFET and GNanoFET. The switching mechanisms and the threshold voltage limits are discussed aiming reduction of the switching time and ON/OFF ratio for better device reliability. Finally a perspective on device integration is introduced.