• 文献标题:   Triangular lattice atomic layer of Sn(1 x 1) at graphene/SiC(0001) interface
  • 文献类型:   Article
  • 作  者:   HAYASHI S, VISIKOVSKIY A, KAJIWARA T, IIMORI T, SHIRASAWA T, NAKASTUJI K, MIYAMACHI T, NAKASHIMA S, YAJI K, MASE K, KOMORI F, TANAKA S
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS EXPRESS
  • ISSN:   1882-0778 EI 1882-0786
  • 通讯作者地址:   Kyushu Univ
  • 被引频次:   4
  • DOI:   10.7567/APEX.11.015202
  • 出版年:   2018

▎ 摘  要

Sn atomic layers attract considerable interest owing to their spin-related physical properties caused by their strong spin-orbit interactions. We performed Sn intercalation into the graphene/SiC(0001) interface and found a new type of Sn atomic layer. Sn atoms occupy on-top sites of Si-terminated SiC(0001) with in-plane Sn-Sn bondings, resulting in a triangular lattice. Angle-resolved photoemission spectroscopy revealed characteristic dispersions at (K) over bar and (M) over bar points, which agreed well with density functional theory calculations. The Sn triangular lattice atomic layer at the interface showed no oxidation upon exposure to air, which is useful for characterization and device fabrication ex situ. (c) 2018 The Japan Society of Applied Physics