• 文献标题:   Flexible Transistors Exploiting P3HT on Paper Substrate and Graphene Oxide Film as Gate Dielectric: Proof of Concept
  • 文献类型:   Article
  • 作  者:   VALENTINI L, CARDINALI M, GRKOVIC M, USKOKOVIC PS, ALIMENTI F, ROSELLI L, KENNY JM
  • 作者关键词:   graphene oxide, flexible electronic, electrical propertie, surface wettability
  • 出版物名称:   SCIENCE OF ADVANCED MATERIALS
  • ISSN:   1947-2935 EI 1947-2943
  • 通讯作者地址:   Univ Perugia
  • 被引频次:   5
  • DOI:   10.1166/sam.2013.1484
  • 出版年:   2013

▎ 摘  要

In this paper we report: the use of graphene oxide in aqueous solution as a gate dielectric material, its application to a MOS transistor based on organic semiconductor and the use of paper as substrate material.