• 文献标题:   Growth of single-layer graphene on Ge (100) by chemical vapor deposition
  • 文献类型:   Article
  • 作  者:   MENDOZA CD, CALDAS PG, FREIRE FL, DA COSTA MEHM
  • 作者关键词:   graphene, germanium, raman spectroscopy, stm/sts, afm
  • 出版物名称:   APPLIED SURFACE SCIENCE
  • ISSN:   0169-4332 EI 1873-5584
  • 通讯作者地址:   Pontificia Univ Catolica Rio de Janeiro
  • 被引频次:   8
  • DOI:   10.1016/j.apsusc.2018.04.019
  • 出版年:   2018

▎ 摘  要

The integration of graphene into nanoelectronic devices is dependent on the availability of direct deposition processes, which can provide uniform, large-area and high-quality graphene on semiconductor substrates such as Ge or Si. In this work, we synthesised graphene directly on p-type Ge (1 0 0) substrates by chemical vapour deposition. The influence of the CH4:H-2 flow ratio on the graphene growth was investigated. Raman Spectroscopy, Raman mapping, Scanning Electron Microscopy, Atomic Force Microscopy and Scanning Tunnelling Microscopy/Scanning Tunnelling Spectroscopy results showed that good quality and homogeneous monolayer graphene over a large area can be achieved on Ge substrates directly with optimal growth conditions. (C) 2018 Elsevier B.V. All rights reserved.