▎ 摘　　要

Direct graphene growth was demonstrated on exfoliated hexagonal boron nitride (h-BN) single crystal flakes by low pressure CVD. The size of the hexagonal single crystal graphene domain increases with deposition time, with maximum size of similar to 270 nm. Most domains were found to nucleate at screw dislocation sites, and a step-flow growth mechanism was observed at atomic steps on the h-BN surface. Understanding the nucleation and growth mechanisms is an important step towards the synthesis of large single crystal graphene on h-BN substrates. (C) 2011 Elsevier Ltd. All rights reserved.