• 文献标题:   Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model
  • 文献类型:   Article
  • 作  者:   ALISULTANOV ZZ
  • 作者关键词:  
  • 出版物名称:   LOW TEMPERATURE PHYSICS
  • ISSN:   1063-777X EI 1090-6517
  • 通讯作者地址:   RAS
  • 被引频次:   3
  • DOI:   10.1063/1.4816116
  • 出版年:   2013

▎ 摘  要

In this paper we have investigated thermoelectric effect in the epitaxial graphene on a semiconductor substrate using a simple model. We have obtained the expressions for static conductance and thermopower of the epitaxial graphene. The thermopower of the epitaxial graphene can be abnormally large near the edges of the semiconductor band gap. (C) 2013 AIP Publishing LLC.