• 文献标题:   Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper
  • 文献类型:   Article
  • 作  者:   LI XS, MAGNUSON CW, VENUGOPAL A, TROMP RM, HANNON JB, VOGEL EM, COLOMBO L, RUOFF RS
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
  • ISSN:   0002-7863
  • 通讯作者地址:   Texas Instruments Inc
  • 被引频次:   868
  • DOI:   10.1021/ja109793s
  • 出版年:   2011

▎ 摘  要

Graphene single crystals with dimensions of up to 0.5 mm on a side were grown by low-pressure chemical vapor deposition in copper-foil enclosures using methane as a precursor. Low-energy electron microscopy analysis showed that the large graphene domains had a single crystallographic orientation, with an occasional domain having two orientations. Raman spectroscopy revealed the graphene single crystals to be uniform monolayers with a low D-band intensity. The electron mobility of graphene films extracted from field-effect transistor measurements was found to be higher than 4000 cm(2) V(-1) s(-1) at room temperature.