• 文献标题:   Terahertz bolometric detection by thermal noise in graphene field effect transistor
  • 文献类型:   Article
  • 作  者:   MAHJOUB AM, SUZUKI S, OUCHI T, AOKI N, MIYAMOTO K, YAMAGUCHI T, OMATSU T, ISHIBASHI K, OCHIAI Y
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Chiba Univ
  • 被引频次:   3
  • DOI:   10.1063/1.4929768
  • 出版年:   2015

▎ 摘  要

Monolayer (MLG) and bilayer (BLG) graphene devices have been fabricated with integrated antennas and have been investigated for a wideband terahertz (THz) detection at room temperature (RT). The devices show opposite (metallic vs. semiconducting, respectively) temperature coefficients of their resistance, which enable us to achieve a reproducible THz response via bolometric heating. The bolometric nature of this response is inferred by determining the spectral density of the 1/f resistance noise exhibited by the devices, as a function of the incident THz power. With increasing power, the spectral density varies in the two devices in a manner that reflects the opposite signs of their resistance temperature coefficients. The bolometric response is furthermore confirmed for both devices by the variation of their Hooge parameter as a function of the THz power. Overall, these observations confirm the capacity of graphene devices for sensitive broadband THz detection near RT. (C) 2015 AIP Publishing LLC.