• 文献标题:   Single-Layer Behavior and Its Breakdown in Twisted Graphene Layers
  • 文献类型:   Article
  • 作  者:   LUICAN A, LI GH, REINA A, KONG J, NAIR RR, NOVOSELOV KS, GEIM AK, ANDREI EY
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:   Rutgers State Univ
  • 被引频次:   369
  • DOI:   10.1103/PhysRevLett.106.126802
  • 出版年:   2011

▎ 摘  要

We report high magnetic field scanning tunneling microscopy and Landau level spectroscopy of twisted graphene layers grown by chemical vapor deposition. For twist angles exceeding similar to 3 degrees the low energy carriers exhibit Landau level spectra characteristic of massless Dirac fermions. Above 20 degrees the layers effectively decouple and the electronic properties are indistinguishable from those in single-layer graphene, while for smaller angles we observe a slowdown of the carrier velocity which is strongly angle dependent. At the smallest angles the spectra are dominated by twist-induced van Hove singularities and the Dirac fermions eventually become localized. An unexpected electron-hole asymmetry is observed which is substantially larger than the asymmetry in either single or untwisted bilayer graphene.