• 文献标题:   One-Dimensional Assembly on Two-Dimensions: AuCN Nanowire Epitaxy on Graphene for Hybrid Phototransistors
  • 文献类型:   Article
  • 作  者:   JANG J, LEE Y, YOON JY, YOON HH, KOO J, CHOE J, JEON S, SUNG J, PARK J, LEE WC, LEE H, JEONG HY, PARK K, KIM K
  • 作者关键词:   aucn nanowire, 1d/2d van der waals heterostructure, phototransistor, 1d chain epitaxy
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Yonsei Univ
  • 被引频次:   4
  • DOI:   10.1021/acs.nanolett.8b02259
  • 出版年:   2018

▎ 摘  要

The van der Waals epitaxy of functional materials provides an interesting and efficient way to manipulate the electrical properties of various hybrid two-dimensional (2D) systems. Here we show the controlled epitaxial assembly of semiconducting one-dimensional (1D) atomic chains, AuCN, on graphene and investigate the electrical properties of 1D/2D van der Waals heterostructures. AuCN nanowire assembly is tuned by different growth conditions, although the epitaxial alignment between AuCN chains and graphene remains unchanged. The switching of the preferred nanowire growth axis indicates that diffusion kinetics affects the nanowire formation process. Semiconducting AuCN chains endow the 1D/2D hybrid system with a strong responsivity to photons with an energy above 2.7 eV, which is consistent with the bandgap of AuCN. A large UV response (responsivity similar to 10(4) A/W) was observed under illumination using 3.1 eV (400 nm) photons. Our study clearly demonstrates that 1D chain-structured semiconductors can play a crucial role as a component in multifunctional van der Waals heterostructures.