▎ 摘　　要

Although the formation of graphene nuclei conventionally requires high temperature of similar to 1050 degrees C in the first growth stage, the presence of the graphene nuclei allowed for low-temperature edge growth, and this peripheral area continued growing even when the temperature was reduced to 300 degrees C in the second growth stage. The graphene grown at the second stage was a single layer with fewer defects. The Raman map showed high homogeneity with a 2D/G ratio >2 over the entire contact area of molten gallium, and the hole mobility was 600 cm(2) V-1 s(-1). (C) 2015 The Japan Society of Applied Physics