▎ 摘　　要

Graphene films demonstrating low sheet resistance and high transparency in the visible light range are promising to be used as electrodes for light-emitting applications. In this work, we report the implementation of single layer graphene as hole injecting electrode for CdSe/ZnS quantum dot-light emitting diodes (QD-LED). We compare graphene vs. indium-tin-oxide (ITO)-based anode junctions by electroluminescence intensity performance of QD-LEDs. Our results demonstrate better hole injection efficiency for the graphene-based electrode at technologically relevant current densities J < 0.4 A/cm(2), therefore, recommending single layer graphene as a valuable alternative to replace ITO in QD-LED technology. (C) 2013 AIP Publishing LLC.