• 文献标题:   Buffer-eliminated, charge-neutral epitaxial graphene on oxidized 4H-SiC (0001) surface
  • 文献类型:   Article
  • 作  者:   SIRIKUMARA HI, JAYASEKERA T
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-8979 EI 1089-7550
  • 通讯作者地址:   So Illinois Univ
  • 被引频次:   1
  • DOI:   10.1063/1.4953217
  • 出版年:   2016

▎ 摘  要

Buffer-eliminated, charge-neutral epitaxial graphene (EG) is important to enhance its potential in device applications. Using the first principles Density Functional Theory calculations, we investigated the effect of oxidation on the electronic and structural properties of EG on 4H-SiC (0001) surface. Our investigation reveals that the buffer layer decouples from the substrate in the presence of both silicate and silicon oxy-nitride at the interface, and the resultant monolayer EG is charge-neutral in both cases. The interface at 4H-SiC/silicate/EG is characterized by surface dangling electrons, which opens up another route for further engineering EG on 4H-SiC. Dangling electron-free 4H-SiC/silicon oxy-nitride/EG is ideal for achieving charge-neutral EG. Published by AIP Publishing.