• 文献标题:   Gate-defined graphene double quantum dot and excited state spectroscopy
  • 文献类型:   Article
  • 作  者:   LIU XL, HUG D, VANDERSYPEN LMK
  • 作者关键词:   double quantum dot, graphene, excited state, top gate, disorder
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Delft Univ Technol
  • 被引频次:   65
  • DOI:   10.1021/nl9040912
  • 出版年:   2010

▎ 摘  要

A double quantum dot is formed in a graphene nanoribbon device using three top gates. These gates independently change the number of electrons on each dot and tune the interdot coupling. Transport through excited states is observed in the weakly coupled double dot regime. We extract from the measurements all relevant capacitances of the double dot system, as well as the quantized level spacing.