▎ 摘　　要

2D transition metal chalcogenides (TMCs) and dichalcogenides (TMDCs) are promising candidates for next-generation electronic devices and sensors. Herein, the fabrication and characterizations of back-gated Si/SiO2/GaSe-based (GaSe: gallium selenide) metal-oxide-semiconductor field-effect transistors (MOSFETs) and top-gated Gr/h-BN/GaSe-based (h-BN: hexagonal boron nitride) metal-insulator-semiconductor field-effect transistors (MISFETs) with a common active layer (GaSe) are reported. The morphological, electrical, and optoelectronic properties are investigated, and the device is found to exhibit p-type behavior with good electrical tunability. At a laser power of 1.147 mu W, the device exhibits a photoresponsivity of 90 mA W-1, I-ON/I-OFF ratios exceeding 10(4), and long decay times. These promising experimental results can promote the application of GaSe-based MISFETs in multifunctional electronic devices.