• 文献标题:   Eliminating defects from graphene monolayers during chemical exfoliation
  • 文献类型:   Article
  • 作  者:   SRIVASTAVA PK, GHOSH S
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Jawaharlal Nehru Univ
  • 被引频次:   10
  • DOI:   10.1063/1.4789517
  • 出版年:   2013

▎ 摘  要

Graphene layers with and without defects have been grown by chemically exfoliating graphite in organic solvents and characterized by different spectroscopic techniques. It has been shown that defects can be controlled in graphene layers while intercalating different organic molecules in graphite. The transfer characteristics of transistors fabricated on graphene monolayers exfoliated using organic solvent with low dielectric constant and low boiling point show almost no shift of minimum conductivity point, i.e., Dirac point, indicating defect free pristine graphene. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789517]