▎ 摘　　要

Plasmons in subwavelength-structured graphene surfaces exhibit strong light-matter interaction and prominent resonance effects in the terahertz/mid-IR frequency range. Due to its exceptionally small electronic specific heat, graphene shows strong photoinduced hot electron effects that significantly alter the plasmon response. This can enable fast control of plasmon resonance through transient heating of carriers. We employ nonlinear pump-probe measurements on subwavelength graphene ribbons to explore the effect of photoinduced hot carriers on graphene plasmons. Measurements taken above and below the plasmon resonance frequency clearly demonstrate an optically induced red-shift of the plasmon resonance, which is a signature of hot carriers in the graphene. The observed photoinduced change in plasmon resonance exhibits very strong (of order 10%) and fast response times (few picoseconds), which are governed by the cooling rate of hot electrons. The results presented here contribute to the understanding of plasmonic hot carriers in graphene and can find applications in fast terahertz modulation and switching.