▎ 摘　　要

Typical graphene field-effect transistors (GFETs) show ambipolar conduction that is unfavorable for some electronic applications In this work, we report on the development of unipolar GFETs. We found that the titanium oxide situated on the graphene surface induced significant hole doping. The threshold voltage of the unipolar p-type GFET was tunable by varying the density of the attached titanium oxide through an etching process. An annealing process followed by silicon nitride passivation was found to convert the, p-type GFETs to unipolar n-type GFETs. An air-stable complementary inverter integrated from the p- and n-GFETs was also successfully demonstrated. The simple fabrication processes are compatible with the conventional CMOS manufacturing technology.