▎ 摘　　要

Self-aligned source/drain (S/D) graphene field-effect transistors (GFETs) with extremely small access lengths were successfully fabricated using a simple device fabrication process without sidewall spacer formation. The self-aligned S/D GFET exhibits superior electrical characteristics, such as the intrinsic carrier mobility of 6100 cm(2)/Vs, the gate leakage current of 10(-10)-10(-9) A and the contact resistance of 412 Omega mu m. In particular, a cutoff frequency of 13 GHz was achieved with a rather large gate length (L-G = 3 mu m), which demonstrates the promising future of this self-aligned GFET.