▎ 摘　　要

Contamination is a major concern in surface and interface technologies. Given that graphene is a 2D monolayer material with an extremely large surface area, surface contamination may seriously degrade its intrinsic properties and strongly hinder its applicability in surface and interfacial regions. However, large-scale and facile treatment methods for producing clean graphene films that preserve its excellent properties have not yet been achieved. Herein, an efficient postgrowth treatment method for selectively removing surface contamination to achieve a large-area superclean graphene surface is reported. The as-obtained superclean graphene, with surface cleanness exceeding 99%, can be transferred to dielectric substrates with significantly reduced polymer residues, yielding ultrahigh carrier mobility of 500 000 cm(2) V-1 s(-1) and low contact resistance of 118 omega mu m. The successful removal of contamination is enabled by the strong adhesive force of the activated-carbon-based lint roller on graphene contaminants.