▎ 摘　　要

We demonstrate theoretically a possibility for modulation of mid-IR radiation by low-voltage gated single/multilayer graphene placed on ferroelectric Pb[Zr((x))Ti((1-x))]O(3) (PZT) substrate. In the range of gate voltages where thin epitaxial PZT films behave as high-permittivity dielectrics, the modulation depth for the case of five-layer graphene can be as high as 10%.