• 文献标题:   Using irradiation-induced defects as pinning sites to minimize self-alignment in twisted bilayer graphene
  • 文献类型:   Article
  • 作  者:   CHEN D, SHAO L
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:  
  • 被引频次:   4
  • DOI:   10.1063/5.0039703
  • 出版年:   2021

▎ 摘  要

Preparing bi-layer graphene under a magic twisting angle of similar to 1.1 degrees has been challenging due to its strong tendency for self-alignment. We propose a method to pin graphene layers and minimize their self-rotation when positioned close to each other. The feasibility is demonstrated by the present study using molecular dynamics simulations. C-60 clusters are used to bombard two individual graphene layers, creating damage on both layers. When two irradiated layers are moving closer to each other, defects from irradiation damaged zones can interact with each other, hence acting as pinning sites to immobilize graphene and minimize rotation or gliding. Dangling bonds from defective regions of each plane induce the formation of sp bonds. Upon sliding, the bond is strong enough to induce the formation of one-dimensional carbon single chain, acting as a thread to constrain the relative movements.