• 文献标题:   Effect of Structural Relaxation on the Electronic Structure of Graphene on Hexagonal Boron Nitride
  • 文献类型:   Article
  • 作  者:   SLOTMAN GJ, VAN WIJK MM, ZHAO PL, FASOLINO A, KATSNELSON MI, YUAN SJ
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:   Radboud Univ Nijmegen
  • 被引频次:   31
  • DOI:   10.1103/PhysRevLett.115.186801
  • 出版年:   2015

▎ 摘  要

We performed calculations of electronic, optical, and transport properties of graphene on hexagonal boron nitride with realistic moire patterns. The latter are produced by structural relaxation using a fully atomistic model. This relaxation turns out to be crucially important for electronic properties. We describe experimentally observed features such as additional Dirac points and the "Hofstadter butterfly" structure of energy levels in a magnetic field. We find that the electronic structure is sensitive to many-body renormalization of the local energy gap.