• 文献标题:   RF analysis of intercalated graphene nanoribbon-based global-level interconnects
  • 文献类型:   Article
  • 作  者:   KAUR M, GUPTA N, KUMAR S, RAJ B, SINGH AK
  • 作者关键词:   multilayer graphene nanoribbon mlgnr, anomalous skin effect ase, intercalation doping, transfer gain, 3db bandwidth, energydelayproduct edp
  • 出版物名称:   JOURNAL OF COMPUTATIONAL ELECTRONICS
  • ISSN:   1569-8025 EI 1572-8137
  • 通讯作者地址:   Punjab Engn Coll
  • 被引频次:   0
  • DOI:   10.1007/s10825-020-01530-5 EA JUN 2020
  • 出版年:   2020

▎ 摘  要

Intercalation doping is emerging as a prospective solution to enhance the performance of graphene nanoribbon interconnects. In this paper, the radio frequency (RF) analysis of stage-2 arsenic pentafluoride- and lithium-doped multilayer graphene nanoribbons (MLGNRs) has been carried out for global-level interconnects in terms of skin depth, surface impedance, critical ratio (C-R), transfer gain, and 3-dB bandwidth. The skin-depth results demonstrate that doped MLGNRs exhibit minimum performance degradation primarily due to their higher conductivity, mean free path, and momentum relaxation time as compared to neutral MLGNR. An equivalent second-order accurate RLC model of an intercalation-doped MLGNR has been used to extract the transfer gain and 3-dB bandwidth results at 14-nm technology node for global-level interconnects. The results are further evaluated by implementing an advanced pi-type equivalent single conductor derived from multi-conductor transmission line model. The doped MLGNR interconnects demonstrate 11-fold enhancement of 3-dB bandwidth as compared to copper (Cu). Also, the delay and energy-delay-product (EDP) computations in time domain for doped MLGNR interconnects exhibit nearly 10 times lesser delay and significant reduction in EDP than Cu counterparts. It is also observed that optimum values for 3-dB bandwidth and EDP parameters for intercalated MLGNRs could be achieved through width optimization. The RF and transient results validate intercalated MLGNRs as a potential candidate to replace Cu for next-generation global-level interconnects.