• 文献标题:   The role of edge-oxidized graphene to improve the thermopower of p-type bismuth telluride-based thick films
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   CHO YM, KIM KT, LEE GS, KIM SH
  • 作者关键词:   edgeoxidized graphene, bismuth telluride, thick film, thermopower
  • 出版物名称:   APPLIED SURFACE SCIENCE
  • ISSN:   0169-4332 EI 1873-5584
  • 通讯作者地址:   Korea Inst Mat Sci
  • 被引频次:   0
  • DOI:   10.1016/j.apsusc.2019.01.026
  • 出版年:   2019

▎ 摘  要

Edge-oxidized graphene-dispersed Bi0.4Sb1.6Te3 (EOG/BST) thick films are fabricated by the hand-printing of EOG/BST paste followed by a heat-treatment process. Fabricated EOG/BST thick films are approximately 200 mu m thick, and the EOGs in the film are dispersed rather than agglomerated but also appear to connect the separated BST grains. A 2 wt% EOG/BST thick film shows a maximum thermopower of 0.00206 W/mK(2), which is approximately 1.7 times higher than the output of 0.00133 W/mK(2) of BST film without EOG. The improved thermopower stems from the EOG, which provides rapid carrier-transport and an increase in the electrical conductivity of the BST film. It has been found that the edge-surface of EOG is chemically bonded with Bi, Te and Sb via interfacial oxygen atoms and the perfect graphite (sp(2)) structure of the EOG facilitates rapid movement of the carriers. The carrier mobility of 2 wt% EOG/BST film sample was improved by about 1.75 times without sacrificing the carrier density compared to that of BST film. These results indicate a promising means of using EOG to enhance the electrical properties of thermoelectric thick films, which can be utilized in active coolers and in wearable power generators.