• 文献标题:   Electronic structure of substitutionally Mn-doped graphene
  • 文献类型:   Article
  • 作  者:   WU M, CAO C, JIANG JZ
  • 作者关键词:  
  • 出版物名称:   NEW JOURNAL OF PHYSICS
  • ISSN:   1367-2630
  • 通讯作者地址:   Zhejiang Univ
  • 被引频次:   71
  • DOI:   10.1088/1367-2630/12/6/063020
  • 出版年:   2010

▎ 摘  要

The electronic structure and magnetism of manganese (Mn)-doped graphene has been studied using the density functional theory. It was found that the electronic structure was sensitive to the value of the on-site energy for the Mn 3d orbital. Thus, it was crucial to accurately account for the electron correlation in the calculation. By using the self-consistent U method, we were able to determine the specific U value in this chemical environment to be 5.39 eV, and we found that the system is a charge transfer insulator with a bandgap of about 0.2 eV. The Mn strongly binds with the carbon atoms, causing the localization of the pi orbital near the Fermi level. The crystal field splits the Mn d orbitals and leads to 3.00 mu(B) magnetic moment at the ground state. The Mn-doped graphene acquires macroscopic antiferromagnetism when the doping density reaches a threshold between 3 and 5%.