▎ 摘　　要

We develop an analytical device model for a graphene field-effect transistor. Using this model, we calculate its current-voltage characteristics at sufficiently high gate voltages when a n-p-n (p-n-p) lateral junction is formed in the transistor channel and the source-drain current is associated with the interband tunneling through this junction. (c) 2008 The Japan Society of Applied Physics.