• 文献标题:   Graphene destruction by metal-carbide formation: An approach for patterning of metal-supported graphene
  • 文献类型:   Article
  • 作  者:   LAHIRI J, BATZILL M
  • 作者关键词:   capacitance, chemical interdiffusion, elemental semiconductor, germanium, hafnium compound, highk dielectric thin film, interface state, lanthanum compound, leakage current, mos capacitor
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Univ S Florida
  • 被引频次:   32
  • DOI:   10.1063/1.3464173
  • 出版年:   2010

▎ 摘  要

With a combination of scanning tunneling microscopy, Auger electron spectroscopy and carbon monoxide titration the stability of graphene-Ni interfaces is investigated. Graphene supported on Ni(111) is stable to annealing temperature of 650 degrees C. However, if additional Ni is deposited on the surface it becomes unstable at already 100 degrees C and a surface-carbide is formed that allows the Ni deposit to penetrate the surface layer. Upon diffusion of all Ni deposits into the substrate, the graphene layer is reformed. The destruction of graphene by the formation of a carbide phase enables patterning of the graphene by controlled nickel deposition. (C) 2010 American Institute of Physics. [doi:10.1063/1.3464173]