• 文献标题:   Atomic level cleaning of poly-methyl-methacrylate residues from the graphene surface using radiolized water at high temperatures
  • 文献类型:   Article
  • 作  者:   ISLAM AE, ZAKHAROV DN, CARPENANUNEZ J, HSIAO MS, DRUMMY LF, STACH EA, MARUYAMA B
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   US Air Force
  • 被引频次:   4
  • DOI:   10.1063/1.5001479
  • 出版年:   2017

▎ 摘  要

Large-scale application of graphene requires its clean transfer from thin metal films, where it is grown via chemical vapor deposition (CVD), to any other substrates of interest. All the existing transfer methodologies, however, leave residues at different degrees on graphene surfaces and can only provide atomically clean graphene surfaces in areas as large as similar to 10(-4) mu m(2). Here, we transfer CVD-grown graphene using Poly-methyl-methacrylate (PMMA) and present a method that can atomically clean the PMMA residues from a larger surface area of graphene using radiolized water obtained via electron-water interaction at high temperatures. The cleaning process was monitored in-situ using an environmental-mode transmission electron microscopy and electron energy loss spectroscopy. These showed the effectiveness of PMMA removal over areas as large as similar to 0.02 mu m(2), whose size was only limited by the size of the electron beam and the presence of inorganic residues after the transfer process. By overcoming these limitations, we may achieve atomically clean graphene transfer to even larger areas-enabling more challenging device applications. Published by AIP Publishing.