▎ 摘　　要

An investigation of the early stage formation of graphene on the C face of 6H-silicon carbide (SiC) is presented. We show that the sublimation of few atomic layers of Si out of the SiC substrate is not homogeneous. In good agreement with the results of theoretical calculations it starts from defective sites, mainly dislocations that define nearly circular graphene layers, which have a pyramidal, volcanolike shape with a center chimney where the original defect was located. At higher temperatures, complete conversion occurs but, again, it is not homogeneous. Within the sample surface, the intensity of the Raman bands evidences inhomogeneous thickness.