▎ 摘　　要

In order to enhance the radiation sensitivity, a junctionless double graphene gate radiation sensitive FET (RADFET) besides associated analytical analysis are both introduced. Analytical models using the technique of variables separation are implemented to measure and evaluate the capabilities of both proposed and standard RADFET devices. In addition, the effect of graphene work function on the device performance measures is also investigated. Moreover, the elaborated model defines the figures of merit in the context of a multi-objective genetic algorithm (MGA) technique. The improved electrical response is compared with existing double gate (DG) RADFETs, where the proposed device figures of merit reveal that the optimized proposed RADFET provides improved electrical performance and sensitivity.