▎ 摘　　要

Quantum transport properties of disordered graphene with structural defects (Stone-Wales and divacancies) are investigated using a realistic pi-pi* tight-binding model elaborated from ab initio calculations. Mean free paths and semiclassical conductivities are then computed as a function of the nature and density of defects (using an order-N real-space Kubo-Greenwood method). By increasing the defect density, the decay of the semiclassical conductivities is predicted to saturate to a minimum value of 4e(2)/pi h over a large range (plateau) of carrier density (>0.5 X 10(14) cm(-2)). Additionally, strong contributions of quantum interferences suggest that the Anderson localization regime could be experimentally measurable for a defect density as low as 1%.