▎ 摘　　要

This study investigates that high-quality GaN thin films can be grown on a few-layer graphene (FLG)/sapphire substrate by embedding a hybrid AlN buffer layer (BL). The hybrid AlN BL is constructed by low-temperature AlN nucleation layer (LT-AlN NL) and high-temperature AlN BL grown respectively by sputtering and metal organic chemical vapor deposition (MOCVD). The high density of edge-type threading dislocation (TD) in the GaN sample without hybrid AlN BL provide current leakage paths, resulting in a symmetric and temperature-independent I-V characteristic curve for a Ni-based Schottky contact. The excellent adhesion and uniform coverage of LT-AlN NL on the FLG layer by sputtering can overcome the nucleation issue and prevent the thermal etching effect of graphene during MOCVD epitaxial process. The edge-type TD density and carbon concentration of the GaN thin films grown on the hybrid AlN BL/FLG/sapphire substrate can be reduced significantly, resulting in a lower intensity of blue, green, and orange luminescences on a 17-K photoluminescence spectrum. The Ni-based Schottky contact with a barrier height of 0.69 eV and leakage current density of 4.38 x 10(-6) A/cm(2) is obtained, which demonstrates that a high-quality GaN thin films can be grown onto an FLG substrate by embedding a hybrid AlN BL.