• 文献标题:   High-quality monolayer graphene for bulk laser mode-locking near 2 mu m
  • 文献类型:   Article
  • 作  者:   WAN HL, CAI W, WANG F, JIANG SZ, XU SC, LIU J
  • 作者关键词:   graphene saturable absorber, 2 mu m laser, passively modelocked, diodepumped, tm:yap crystal
  • 出版物名称:   OPTICAL QUANTUM ELECTRONICS
  • ISSN:   0306-8919 EI 1572-817X
  • 通讯作者地址:   Shandong Normal Univ
  • 被引频次:   40
  • DOI:   10.1007/s11082-015-0277-0
  • 出版年:   2016

▎ 摘  要

The large-area and high-quality monolayer graphene film was grown on Cu foil by chemical vapor deposition (CVD) technique. A stable diode-pumped passively mode-locked Tm:YAP laser using the high-quality monolayer graphene as saturable absorber (SA) was accomplished for the first time. Under the absorbed pump power of 7.67 W, the maximum output power was 256 mW at the center wavelength of 1988.5 nm. The pulse train with a repetition rate of 62.38 MHz was generated with the highest single pulse energy of 4.1 nJ. Our work displays that graphene was a promising saturable absorber in making low-cost and ultrafast lasers.