• 文献标题:   Precise tuning chemistry and tailoring defects of graphene oxide films by low energy ion beam irradiation
  • 文献类型:   Article
  • 作  者:   WEI YB, PASTUOVIC Z, MURPHY T, GORE DB
  • 作者关键词:   graphene oxide, ultrathin film, ion beam, defect, raman, srim
  • 出版物名称:   APPLIED SURFACE SCIENCE
  • ISSN:   0169-4332 EI 1873-5584
  • 通讯作者地址:   Macquarie Univ
  • 被引频次:   0
  • DOI:   10.1016/j.apsusc.2019.144651
  • 出版年:   2020

▎ 摘  要

Precise tuning chemistry and tailoring nanopores of graphene oxide (GO) thin films are vital for their application for liquid and gas separation. In this work, ultra-thin GO films with thicknesses of about 150 nm were prepared and then modified by a low energy carbon ion beam with ion fluences ranging from 1 x 10(15) ions.cm(-2) to 1 x 10(17) ions.cm(-2). An ion fluence of 1 x 10(16) ions.cm(-2) is a threshold for the changes to the surface geometry (i.e. the chemical state and the consequent morphology) of the GO films. Moreover, X-ray photoelectron spectroscopy (XPS) reveals that oxygen loss in ion beam-induced reduction of GO films was mainly by the elimination of the unstable C=O species. Raman spectroscopy indicates that a mass of defects with a mean defect distance of about 1.4 nm was generated in GO films by C+ irradiation. According to SRIM simulation, an average of 208 carbon vacancies were created in the GO film per impinging C+. These results suggest that low energy carbon ion beam irradiation is promising for simultaneously reducing and drilling nanoscale pores on GO surfaces in a controllable manner, which could be used for engineering GO-based separation membranes.