• 文献标题:   Carrier distribution control in bilayer graphene under a perpendicular electric field by interlayer stacking arrangements
  • 文献类型:   Article
  • 作  者:   GAO YL, OKADA S
  • 作者关键词:   dft, bilayer graphene, dualgate fieldeffective transistor, carrier distribution
  • 出版物名称:   APPLIED PHYSICS EXPRESS
  • ISSN:   1882-0778 EI 1882-0786
  • 通讯作者地址:  
  • 被引频次:   2
  • DOI:   10.35848/1882-0786/abdd76
  • 出版年:   2021

▎ 摘  要

We use density function theory to study the carrier distribution in bilayer graphene under a perpendicular electric field. The carrier distribution in bilayer graphene strongly depends on the interlayer stacking arrangements, field strength, and carrier concentration. Unusual carrier localization, which is dependent on the stacking arrangement, is observed under a high electric field and low carrier doping concentration. For all other field and carrier doping concentration conditions, the carriers are distributed throughout the layers, irrespective of the interlayer stacking arrangements.