• 文献标题:   Stress and charge transfer in uniaxially strained CVD graphene
  • 文献类型:   Article
  • 作  者:   BOUSA M, ANAGNOSTOPOULOS G, DEL CORRO E, DROGOWSKA K, PEKAREK J, KAVAN L, KALBAC M, PARTHENIOS J, PAPAGELIS K, GALIOTIS C, FRANK O
  • 作者关键词:   chemical vapour deposition, graphene, raman spectroscopy, uniaxial tension
  • 出版物名称:   PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS
  • ISSN:   0370-1972 EI 1521-3951
  • 通讯作者地址:   J Heyrovsky Inst Phys Chem AS CR
  • 被引频次:   6
  • DOI:   10.1002/pssb.201600233
  • 出版年:   2016

▎ 摘  要

Mechanical properties of graphene prepared by chemical vapour deposition (CVD) are not easily comparable to the properties of nearly perfect graphene prepared by mechanical cleavage. In this work, we attempt to investigate the mechanical performance of CVD graphene (simply supported or embedded in polymer matrix), transferred by two different techniques, under uniaxial loading with simultaneous in situ monitoring by Raman microspectroscopy. The level of charge transfer doping and strain is assessed using the vector analysis modified for uniaxial strain. The strain distribution across the samples varies significantly, owing to the growth and transfer process, which induces wrinkles and faults in the CVD graphene. In simply supported specimens, the stress transfer efficiency is generally very low and the changes in Raman spectra are dominated by variations in the charge transfer originating from the realignment of the domains on the substrate upon the application of strain. In contrast, samples covered with an additional polymer layer exhibit an improved stress transfer efficiency, and the alterations of charge doping levels are negligible. In fully embedded specimens, the variations in stress transfer efficiencies are caused by the size of the effective graphene domains defined by cracks, folds and/or wrinkles.