▎ 摘　　要

We fabricated graphene/Ni patterns directly on sapphire substrates through a self-forming process utilizing the pattern-controlled catalyst metal agglomeration technique, which was accomplished via a thermal annealing process of rectangular Ni patterns preformed on thin amorphous carbon films on sapphire. It was confirmed that graphene films were synthesized along with the preformed Ni patterns as a result of the progress of Ni agglomeration. Notably, a few-layer graphene film was observed in specific areas along the periphery of the preformed Ni patterns. The self-forming graphene/Ni patterns showed ohmic conductivity with a contact resistance ranging from 4 x 10(4) to 7 x 10(4) Omega mu m. Published by AIP Publishing.