▎ 摘　　要

Conventional methods to produce graphene/silicon Schottky junctions inevitably involve graphene transfer and metal deposition, which leads to the techniques being complicated, high-cost, and environmentally unfriendly. It is possible to directly grow hybrid nanocrystalline graphene/graphite transparent electrodes from photoresist on quartz without any catalyst. Due to the source material being photoresist, nanographene/graphite patterns can easily be made on Si/SiO2 structures to form nanographene/silicon Schottky junctions via commercial photolithography and silicon techniques. The obtained Schottky junctions exhibit excellent properties with respect to photodetection, with photovoltage responsivity of 300 V W-1 at a light power of 0.2 W and photovoltage response time of less than 0.5 s. The devices also exhibit an excellent reliability with the photovoltage deviating less than 1% when cycled over 200 times.