• 文献标题:   The Possibility of Chemically Inert, Graphene-Based All-Carbon Electronic Devices with 0.8 eV Gap
  • 文献类型:   Article
  • 作  者:   QI JS, HUANG JY, FENG J, SHI DN, LI J
  • 作者关键词:   selffolding, graphene, nanotube, halfnanotube, bilayer edge, hybrid device
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851
  • 通讯作者地址:   Sandia Natl Labs
  • 被引频次:   35
  • DOI:   10.1021/nn102322s
  • 出版年:   2011

▎ 摘  要

Graphene is an Interesting electronic material. However, flat monolayer graphene does not have significant gap in the electronic density of states, required for a large on off ratio in logic applications. We propose here a novel device architecture, composed of self-folded carbon nanotube graphene hybrids, which have been recently observed experimentally in Joule-heated graphene. These experiments demonstrated the feasibility of cutting, folding, and welding few-layer graphene in situ to form all-carbon nanostructures with complex topologies. The electronic gap of self-folded nanotubes can be combined with the semimetallicity of graphene electrodes to form a "metal-semiconductor metal" junction. By ab initio calculations we demonstrate large energy gaps in the transmission spectra of such junctions, which preserve the intrinsic transport characteristics of the semiconducting nanotubes despite topologically necessary disinclinations at the flat graphene curved nanotube interface. These all-carbon devices are proposed to be constructed by contact probe cutting and high-temperature annealing and, If produced, would be chemically stable at room temperature under normal gas environments.