▎ 摘　　要

Graphene and three-dimensional topological insulators are well-known Dirac materials whose bulk and surface states are governed by Dirac equations. They not only show good transport properties but also carry various quanta related to the geometrical phase such as charge, spin, and valley Hall conductances. Therefore, it is a great challenge to combine the two Dirac materials together, realizing multiple Dirac fermions. By using first-principles density-functional-theory calculations, we demonstrate such a system built from topological insulator-band insulator-graphene superlattice structures. Hexagonal boron nitride is proposed as an ideal band-insulating material in gluing graphene and topological insulators, providing a good substrate for graphene and a sharp interface with a topological insulator. The power factors for p-type doping are largely enhanced due to the charge-conducting channels through multiple Dirac cones. The systems characterized by the coexistence of the topologically protected interfacial and graphene Dirac cones can pave the way for developing integrated devices for electronics, spintronics and valleytronics applications.