• 文献标题:   pi Berry phase and Veselago lens in a bilayer graphene np junction
  • 文献类型:   Article
  • 作  者:   PARK S, SIM HS
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   Korea Adv Inst Sci Technol
  • 被引频次:   25
  • DOI:   10.1103/PhysRevB.84.235432
  • 出版年:   2011

▎ 摘  要

Klein tunneling in gapless bilayer graphene, perfect reflection of electrons injecting normal to a pn junction, is expected to disappear in the presence of energy band gap induced by external gates. We theoretically show that the Klein effect still exists in gapped bilayer graphene, provided that the gaps in the n and p regions are balanced such that the polarization of electron pseudospin has the same normal component to the bilayer plane in the regions. We attribute the Klein effect to pi Berry phase (rather than the conventional value 2 pi of bilayer graphene) and to electron-hole and time-reversal symmetries. The Klein effect and the pi Berry phase can be identified in an electronic Veselago lens, an important component of graphene-based electron optics.