▎ 摘　　要

We used scanning tunneling microscopy, low-energy electron diffraction, and Raman spectroscopy to investigate the growth of graphene on 3C-SiC(11)/SiO2/Si(111) surfaces with ion-beam irradiation via the SiC surface decomposition method. We were unable to obtain graphene after annealing the 3C-SiC(111) surface at 1100 degrees C for 3 min without Ar+ ion-beam irradiation. When a 3C-SiC(111) surface was irradiated with an Ar+ ion beam at an acceleration voltage of 1 keV and an incident angle of 80 degrees and subsequently annealed at 1100 degrees C for 3 min, graphene formed on the SiC surface. However, when an Ar+ ion beam was used at an incident angle of 70 or 60 degrees, graphene layers were not formed. These results indicate that the breakage of bonds in the surface region of the SiC(111) substrate by ion-beam irradiation promotes the formation of graphene. (C) 2017 The Japan Society of Applied Physics