▎ 摘　　要

The cause of drain current (I-D) drift in graphene field-effect transistors is analyzed and a method to suppress the drift is proposed. By analyzing I-D-time characteristics, a condition of reasonable gate, drain and source biases (V-G, V-D, and V-S) is proposed to suppress I-D drift. Based on this result, we find a condition for V-G during off-time (V-base), V-D, and V-S in pulsed I-V measurement to obtain the intrinsic I-D-V-G curves, and analyze the effect of V-base on the Dirac point shift. Through an analysis of I-D-time characteristics depending on V-G, I-D drift according to the range of V-G is explained.