• 文献标题:   Semiconducting graphene nanoribbon retains band gap on amorphous or crystalline SiO2
  • 文献类型:   Article
  • 作  者:   HOSSAIN MZ
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   CALTECH
  • 被引频次:   1
  • DOI:   10.1063/1.3657494
  • 出版年:   2011

▎ 摘  要

Electronic properties of a semiconducting armchair graphene nanoribbon on SiO2 are examined using first-principles calculations and taking into account the van der Waals interaction. Unlike semiconducting carbon nanotubes, which exhibit variations in band gap on SiO2, the nanoribbon is found to retain its band gap on SiO2, regardless of the separation distance or the dielectric's surface type-crystalline or amorphous. The interfacial interaction leads to electron-transfer from the nanoribbon to the dielectric. Moreover, for crystalline SiO2, the quantity of electron-transfer and the binding energy depend strongly on the type of surface termination and weakly on the binding sites. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3657494]